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Tech Voice
Technical Paper
Mar. 18, 2026
News
Website Relaunch Announcement
Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Sep. 24, 2025
News
Corporate Name Change Announcement
Jun. 24, 2025
Events
Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth
May 20, 2025
News
Realization of Controlled n-Type Doping of β-Ga2O3 Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices
Apr. 11, 2025
News
Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
Mar. 31, 2025
News
University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Oct. 11, 2024
News
Ohio State University Selects Taiyo Nippon Sanso MOCVD and HVPE Platforms for Research and Development of Advanced Nitride and Oxide Materials and Devices
Sep. 24, 2024
Events
Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply
Jun. 20, 2024
News
Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products
Apr. 22, 2024
News
Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.
Mar. 11, 2024
Events
Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed
Mar. 04, 2024
Events
Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.
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Mar. 18, 2026
News
Website Relaunch Announcement
Sep. 24, 2025
News
Corporate Name Change Announcement
May 20, 2025
News
Realization of Controlled n-Type Doping of β-Ga2O3 Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices
Apr. 11, 2025
News
Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
Mar. 31, 2025
News
University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Oct. 11, 2024
News
Ohio State University Selects Taiyo Nippon Sanso MOCVD and HVPE Platforms for Research and Development of Advanced Nitride and Oxide Materials and Devices
Jun. 20, 2024
News
Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products
Apr. 22, 2024
News
Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.
Jun. 30, 2023
News
Production Efficiency Improved by 2X Compared to Conventional Systems, Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems
Feb. 07, 2023
News
Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)
Oct. 31, 2022
News
Taiyo Nippon Sanso conducted a presentation at the 41st Electronic Materials Symposium (EMS-41), held in Nara, Japan from October 19 (Wed) to 21 (Fri), 2022.
Topic: In-plane uniformity control of Al composition and thickness for AlGaN-based Far-UVC LEDs growth
Sep. 26, 2022
News
Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.
Jun. 29, 2022
News
We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.
Apr. 20, 2022
News
Taiyo Nippon Sanso Ga2O3 MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology
Apr. 07, 2022
News
Taiyo Nippon Sanso and RIKEN demonstrate MOCVD AlGaN-based deep ultraviolet LED EL emission at 226nm
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May 18, 2016
Events
Taiyo Nippon Sanso is planning two presentations during the poster session at the 2016 Compound Semiconductor Week (CSW2016) and will also have an exhibit (Booth #6) from June 26 to 30 at the Toyama International Conference Center, Toyama, Japan.
May 18, 2016
Events
Taiyo Nippon Sanso is planning to give a presentation during the poster session at the 18th International Conference on Metal Organic Vapor Phase Epitaxy and will also have an exhibit (Booth #18) from July 10 to 15 at the Sheraton San Diego Hotel & Marina. Also, Sandia National Laboratories will give an oral presentation about a paper called "Growth Evolution of AlN on Sapphire at High Temperature" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster presentation
●Session: PS-1
●Topic: Characterization of AlN and Mg-Doped AlxGa1-xN (x>0.2) Grown by Using Horizontal High-Flow-Rate MOVPE System
●Date & Time: Jul. 12, 4:00PM-6:00PM Sandia National Laboratories Oral presentation
●Session: 1D-1 AlN Heteroepitaxy at Grande Ballroom C
●Topic: Growth Evolution of AlN on Sapphire at High Temperature
●Date & Time: Jul. 11, 4:00PM
Feb. 22, 2016
Events
Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.”
Feb. 22, 2016
Events
Taiyo Nippon Sanso is planning a presentation during the 63rd JSAP Spring Meeting, 2016 from March 19 to 22 at the Tokyo Institute of Technology.
The topic will be “Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Si substrate.”
Feb. 22, 2016
Events
Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”
Oct. 06, 2015
Events
Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate"
Oct. 06, 2015
Events
Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices"
Oct. 06, 2015
Events
Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD"
Sep. 01, 2015
Events
Taiyo Nippon Sanso is planning a presentation during the poster session at the 76th JSAP Autumn Meeting 2015 from September 13 to 16, 2015 at Nagoya Congress Center in Nagoya, Japan.
The topics will be "Growth of n-type AlGaN (Al>0.5) at high rate using high-speed-flow MOCVD" and "Relationship between AlN layer and vertical breakdown voltage of AlGaN/GaN HEMT on Si substrate".
Aug. 04, 2015
Events
Taiyo Nippon Sanso plans to have a booth at the Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP) from August 20 to 21, 2015 at Hilton Fukuoka Sea Hawk in Fukuoka, Japan.
Aug. 04, 2015
Events
Taiyo Nippon Sanso plans to have a booth at the 11th Topical Workshop on Heterostructure Microelectronics (TWHM) from August 23 to 26, 2015 at Hida Hotel Plaza in Takayama, Japan.
It is also planning to participate in the poster session on the topic of "Correlation of initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances".
Aug. 04, 2015
Events
Taiyo Nippon Sanso plans to have a booth at the 11th International Conference on Nitride Semiconductors (ICNS-11) from August 30 to September 4, 2015 at the Beijing International Convention Center in Beijing, China.
Feb. 26, 2015
Events
Taiyo Nippon Sanso plans to have a booth at LED Taiwan 2015 from March 25 to 28, 2015 at the TWTC Nangang Exhibit Hall in Taipei, Taiwan.
Jul. 02, 2014
Events
Taiyo Nippon Sanso plans to have a booth at SSDM2014 (Solid State Devices and Materials 2014) from September 8 to 11, 2014 at the Tsukuba International Congress Center.
Jul. 02, 2014
Events
Taiyo Nippon Sanso plans to have a booth at IWN 2014 (International Workshop on Nitride Semiconductors 2014) from August 24 to 29, 2014 at the Centennial Hall in Wroclaw, Poland.
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Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Feb. 01, 2017
Technical Paper
Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
Jan. 05, 2017
Technical Paper
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Oct. 07, 2016
Technical Paper
Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient
Oct. 07, 2016
Technical Paper
Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si
Aug. 30, 2016
Technical Paper
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
Aug. 28, 2016
Technical Paper
Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application
Aug. 28, 2016
Technical Paper
High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience
Jul. 10, 2016
Technical Paper
Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE
Jun. 26, 2016
Technical Paper
Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016
Jun. 26, 2016
Technical Paper
Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016
Jun. 17, 2016
Technical Paper
GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016
Mar. 19, 2016
Technical Paper
Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)
Mar. 19, 2016
Technical Paper
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances
Mar. 06, 2016
Technical Paper
Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016
Oct. 01, 2015
Technical Paper
NEW TYPE MOCVD SYSTEM “SR4000HT”
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