News

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

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Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) at the 27th International Photovoltaic Science and Engineering Conference (PVSEC 2017) from November 12 (Sun) to 17 (Fri), 2017 at Lake Biwa Otsu Prince Hotel, Otsu, Shiga, Japan.
Oral Presentation
●Session: 3Tu5.4
●Topic: Fabrication of GaAs solar cells grown with InGaP window layers by Hydride Vapor Phase Epitaxy
●Date & Time: Nov. 14 (Tue), 2017 2:30PM-2:45PM
●Place: Room 3

Taiyo Nippon Sanso is planning a presentation at the 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) from October 8 (Sun) to 12 (Thu), 2017 at the Banff Centre, Banff, Alberta, Canada.
Poster Presentation
●Session: TP24
●Topic: Characterization of AlN Layer on 4 Inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
●Date & Time: Oct. 10 (Tue), 2017 4:00PM-6:00PM

The National Institute of Advanced Industrial Science and Technology (AIST) and Taiyo Nippon Sanso are planning two presentations at the 44th Photovoltaic Specialists Conference (PVSC 2017) from June 25 (Sun) to 30 (Fri), 2017 at the Washington Marriott Wardman Park, Washington D.C., USA.
Presentation Topic
●Characterization of GaAs solar cells grown by hydride vapor phase epitaxy in a horizontal reactor
●Extremely high-speed GaAs growth by MOVPE for low cost PV application

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth with Matheson TRI-Gas at the 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) from July 30 (Sun) to August 4 (Fri), 2017 at Eldorado Hotel and Spa, Santa Fe, NM, USA.
Presentation Topic
●Properties of GaN on high quality AlN sapphire template by using metalorganic chemical vapor deposition

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the 12th International Conference on Nitride Semiconductors (ICNS-12) from July 24 (Mon) to 28 (Fri), 2017 at Strasbourg Convention Center, Strasbourg, France.
Presentation Topic
●Characteristics of AlN layer on 4-inch sapphire substrate by high temperature annealing in nitrogen atmosphere

Taiyo Nippon Sanso is planning to give two presentations during the poster session at the International Workshop on Nitride Semiconductors (IWN) 2016 and Matheson TRI-Gas/Taiyo Nippon Sanso will also have an exhibit booth from October 2 (Sun) to 6 (Thu), 2016 at the Hilton Orlando Lake Buena Vista in Orlando, Florida USA.
Also, Sandia National Laboratories will give an oral presentation about a paper called ""Low Etch Pit Density AlN on Sapphire"" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster Presentation
●Session: PS1.27 at Grand Ballroom
●Topic: Regrowth of High‐Al‐Content AlGaN and AlN on High‐Quality AlN Template Fabricated by Annealing at 1700C under Nitrogen Ambient
●Date & Time: Oct. 3 (Mon), 2016 6:30PM-8:30PM
●Session: PS2.122 at Grand Ballroom
●Topic: Impact of Crystal Quality of AlN Nucleation Layer on the Vertical Direction Breakdown Voltage of AlGaN/GaN High-Electron-Mobility Transistor Structures on Si
●Date & Time: Oct. 6 (Thu), 2016 9:45AM-10:45AM
Sandia National Laboratories Oral Presentation
●Session: A2.7.05 Epitaxial Growth VII: Epitaxial Growth of (Al,Ga)N at International South
●Topic: Low Etch Pit Density AlN on Sapphire
●Date & Time: Oct. 6 (Thu), 2016 9:1

Taiyo Nippon Sanso is planning two presentations at the European Materials Reserch Society (E-MRS) 2016 Fall Meeting from September 19 (Mon) to 22 (Thu), 2016 at the Warsaw University of Technology in Warsaw, Porland.
Oral Presentation
●Session: G.2.1
●Topic: Challenges to GaN MOCVD: High Growth rate and High Purity
●Date & Time: Sep 19 (Mon), 2016 11:00AM Poster Presentation
●Session: F.P.1.13
●Topic: Characterization of AlN and AlxGa1-xN (x > 0.5) films regrown by high-temperature MOCVD on N2-annealed AlN template
●Date & Time: Sep 19 (Mon), 2016 5:45PM

Taiyo Nippon Sanso is planning three presentation during the poster session at the 77th JSAP Autumn Meeting 2016 from September 13 (Tue) to 16 (Fri), 2016 at the Toki Messe in Nigata, Japan.
Poster Presentation
●Session: 14a-P6-15
●Topic: The influence of number of strained-layer super-lattice (SLS) periods in vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor on Si substrates
●Date & Time: Sep. 14 (Wed), 2016 9:30AM-11:30AM
●Session: 16a-P5-18
●Topic: Regrowth of AlGaN (Al > 0.5) and AlN on AlN Template Processed by High temperature Annealing at Nitrogen Atmosphere
●Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
●Session: 16a-P5-19
●Topic: Control of C and Si Doping in Low Si-doped GaN Using Multiwafer MOCVD Tool
●Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM

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