UR25K

The UR25K is a high-throughput MOCVD system for 100/150mm GaN device massproduction.

Based on the quality and uniformity-proven reactor of the atmospheric pressured SR series
Automated parts handling system for the highest productivity
Lowest cost of ownership by high growth rate epitaxy
Highest throughput with the lowest downtime with Cl2 dry cleaning equipment

Epitaxial growth of GaN on Si (LED, Power device, etc.)

UR25K Specifications

Reactor type	Face up, rotation & revolution
Wafer size	4” x 10 or 6” x 7
Heating system	Multi zone resistance heaters
Sourcses	TMGa, TEGa, TMAl, TMIn, NH³
Sourcses	Cp²Mg, SiH4
Gas nozzles	Three laminar flow horizontals
Transportation	Automatic susceptor unit transuportation