BMC301

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GaAs/InP Mass Production

The BMC301 is a mass production MOCVD system for GaAs/InP, aimed at applications such as high-speed communication device and laser diode (LD).

GaAs/InP Mass Production Img

Advantages

BMC301

Applications

  • High-frequency and high-speed devices
  • Optical Communication Devices
  • LED
  • Infrared sensors and image sensors

BMC301 Specifications

Reactor type Face down, rotation & revolution
Wafer size 2"x42～6"x6 wafers
Heating system 6 zone resistance heaters
Sourcses TMGa, TEGa, TMAl, TMIn, NH³
Cp²Mg, SiH4
Gas nozzles Three laminar flow horizontals
Growth pressure 13 to 100 kPa

BMC301

3"×10 Reactor

Product Lineup

GaN

GaAs

Ga2O3

Product inquiries and consultations

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